Zno Nano-Stripes Synthesized using Photoelectrochemical Wet Etching Method

Photoelectrochemical Etching of InAs

Photoelectrochemieal etching of n-InAs (Eg = 0.36 eV) is demonstrated. Although the concentration of thermally generated minority carriers and saturation current are high compared to larger bandgap semiconductors, photocurrent to dark current ratios as high as 4:1 were obtained at low temperature (2°C) and at potentials near the flatband potential. A surface film primarily composed of arsenic o...

Faceted sidewall etching of n-GaN on sapphire by photoelectrochemical wet processing

A wet etch process that produces smooth sidewalls aligned with the m-plane ({1!100}) crystal facets of Ga-polar GaN grown on sapphire is demonstrated by combining photo-electrochemical (PEC) treatment with a postprocessing wet etch step. This novel process results in faceted and extremely smooth vertical etched sidewalls. This two-step process consists of a PEC treatment to define the geometry ...

Wet and Dry Etching Theory

Visible and infrared emission from Si/Ge nanowires synthesized by metal-assisted wet etching

Multi-quantum well Si/Ge nanowires (NWs) were realized by combining molecular beam epitaxy deposition and metal-assisted wet etching, which is a low-cost technique for the synthesis of extremely dense (about 1011 cm-2) arrays of NWs with a high and controllable aspect ratio. In particular, we prepared ultrathin Si/Ge NWs having a mean diameter of about 8 nm and lengths spanning from 1.0 to 2.7 ...

Macroscale Transformation Optics Enabled by Photoelectrochemical Etching.

Photoelectrochemical etching of silicon can be used to form lateral refractive index gradients for transformation optical devices. This technique allows the fabrication of macroscale devices with large refractive index gradients. Patterned porous layers can also be lifted from the substrate and transferred to other materials, creating more possibilities for novel devices.